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SFH615AA/AGB/AGR
5.3 kV TRIOS(R) Optocoupler High Reliability
FEATURES * High Current Transfer Ratios - at 5 mA: 50-600% - at 1 mA: 60% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VACRMS * High Collector-Emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100"(2.54 mm) Spacing * High Common-Mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 * VDE 0884 Available with Option 1 * SMD Option - See SFH6106/16/56 Data Sheet DESCRIPTION The SFH615AA/AGB/AGR features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC.
Dimensions in inches (mm)
2
1
Pin One I.D.
.268 (6.81) .255 (6.48)
Anode 1 Cathode 2
4 Collector 3 Emitter
3
4
.190 (4.83) .179 (4.55) .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .135 (3.43) .115 (2.92) 4 Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) 3-9 1.00 (2.54) Typ. 10 Typ. .305 (7.75)
.012 (.30) .008 (.20)
Maximum Ratings Emitter Reverse Voltage...................................................................................... 6 V DC Forward Current........................................................................... 60 mA Surge Forward Current (tP10 s) ....................................................... 2.5 A Total Power Dissipation................................................................... 100 mW Detector Collector-Emitter Voltage ..................................................................... 70 V Emitter-Collector Voltage ........................................................................ 7 V Collector Current................................................................................ 50 mA Collector Current (tP1 ms).............................................................. 100 mA Total Power Dissipation................................................................... 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74.................................................................... 5300 VACRMS Creepage ...........................................................................................7 mm Clearance ..........................................................................................7 mm Insulation Thickness between Emitter and Detector ...................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1....................................................175 Isolation Resistance VIO=500 V, TA=25C .....................................................................1012 VIO=500 V, TA=100C ...................................................................1011 Storage Temperature Range................................................. -55 to +150C Ambient Temperature Range ................................................ -55 to +100C Junction Temperature .........................................................................100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm)...............................................260C
1
Characteristics (TA=25C)
Description Emitter (IR GaAs) Forward Voltage Reverse Current Capacitance Thermal Resistance Detector (Si Phototransistor) Capacitance Thermal Resistance Package Collector-Emitter Saturation Voltage Coupling Capacitance VCESAT CC 0.25 (0.4) 0.4 V pF IF=10 mA, IC=2.5 mA CCE RthJA 5.2 500 pF K/W VCE=5 V, f=1 MHz VF IR C0 RthJA 1.25 (1.65) 0.01 (10) 13 750 V
A
Symbol
Unit
Condition
IF=60 mA VR=6 V VR=0 V, f=1 MHz
pF K/W
Current Transfer Ratio (IC/IF at VCE=5 V) and Collector-Emitter Leakage Current
Description IC/ IF (IF=5 mA) Collector-Emitter Leakage Current, ICEO VCE=10 V AA 50-600 10 (100) AGB 100-600 10 (100) AGR 100-300 10 (100) % nA
Switching Operation (with saturation)
IF=5 mA
1.9 K VCC=5 V
IF=5 mA
Turn-on Time Turn-off Time
47
tON tOFF
2.0 25
s s
SFH615AA/AGB/AGR
2
Figure 1. Current transfer ratio (typ.) vs. temperature IF=10 mA, VCE=0.5 V
Figure 2. Output characteristics (typ.) Collector current vs. collector-emitter voltage TA=25C
Figure 3. Diode forward voltage (typ.) vs. forward current
Figure 4. Transistor capacitance (typ.) vs. collector-emitter voltage TA=25C, f=1 MHz
20 pF 15
Figure 5. Permissiable pulse handling capability. Fwd. current vs. pulse width Pulse cycle D=parameter, TA=25C
Figure 6. Permissible power dissipation vs. ambient temp.
C
10
5
CCE
0 10-2
10-1
10-0
101 V Ve
102
Figure 7. Permissible diode forward current vs. ambient temp.
SFH615AA/AGB/AGR
3

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